data sheet caution observe precautions when handling because these devices are sensitive to electrostatic discharge. t h e informati on in t his d o cume n t i s s ubject to change w ith out n oti c e . b e f o re u s i ng thi s d o c u m e nt, pleas e c o n firm that thi s i s the l ate st v e rsi on. n o t a ll d e vices /ty p e s a v ailab l e in eve r y c o unt r y . pl eas e c hec k wit h loc a l nec compound semic o nduc t or d e v ice s rep r e s e nta t i ve fo r a vai labil ity and a ddit ional i n f ormat ion. npn silicon rf transistor ne68539 / 2SC4957 npn epitaxial silicon rf transistor for high-frequency low-noise amplification 4-pin minimold the mark shows major revised points. document no. pu10520ej01v0ds (1st edition) (previous no. p10379ej2v0ds00) date published september 2004 cp(k) features ? low noise, high gain ? low voltage operation ? low reverse transfer capacitance c r e = 0.3 pf typ. ? 4-pin minimold package orderi ng i n formati on m r o f g n i y l p p u s y t i t n a u q r e b m u n t r a p 2SC4957 50 pcs (non reel) 2SC4957-t1 3 kpcs/reel ? 8 mm wide embossed taping ? pin 3 (base), pin 4 (emitter) face to perforation side of the tape remark to order evaluation samples, contact your nearby sales office. t he u nit sample quantity is 50 pcs. absolute maxi mum rati n gs (t a = +25 c) parameter symbol ratings unit collector to base voltage v cb o 9 v collector to emitter voltage v ce o 6 v emitter to base voltage v ebo 2 v i t n e r r u c r o t c e l l o c c 30 ma total power dissipation p tot n ot e 180 mw junction temperature t j 150 c storage temperature t s tg ?65 to +150 c note free air
data sheet pu10520ej01v0ds 2 2SC4957 electri cal characterist i cs ( t a = +25 c) parameter symbol test conditions min. typ. max. unit s c i t s i r e t c a r a h c c d collector cut-off current i cb o v cb = 5 v, i e = 0 ma ? ? 100 na emitter cut-off current i ebo v e b = 1 v, i c = 0 ma ? ? 100 na h n i a g t n e r r u c c d f e n ote 1 v ce = 3 v, i c = 1 0 ma 75 ? 150 ? s c i t s i r e t c a r a h c f r gain bandwidth product f t v ce = 3 v, i c = 10 ma ? 1 2 ? g hz inserti on power gai n ? s 21e ? 2 v ce = 3 v, i c = 10 ma, f = 2.0 ghz 9 11 ? db v f n e r u g i f e s i o n ce = 3 v, i c = 3 ma, f = 2.0 ghz ? 1.5 2.5 db reverse transfer capacitance c r e n ote 2 v cb = 3 v, i e = 0 ma, f = 1.0 mhz ? 0.3 0.5 pf notes 1. pulse measurement: pw 350 s, duty cycle 2 % 2 . collector to base capacit ance when the emitter grounded h f e classi fi cati on rank t83 marking t83 h f e value 75 to 150 ne68539 /
data sheet pu10520ej01v0ds 3 2SC4957 typi cal characteristi cs (t a = +25 c, unless otherwise specified) collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage dc current gain h fe collector current i c (ma) collector current dc current gain vs. gain bandwidth product f t (ghz) collector current i c (ma) vs. collector current gain bandwidth product total power dissipation p tot (mw) ambient temperature t a (?c) total power dissipation vs. ambient temperature reverse transfer capacitance c re (pf) collector to base voltage v cb (v) vs. collector to base voltage reverse transfer capacitance collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage 200 100 0 50 100 150 1 8 0 m w free air 0.1 0.5 0.2 0.3 0.4 0.5 1 2 5 10 20 f = 1 m h z 50 40 30 20 10 0 0.5 1.0 v ce = 3 v 60 0 1 5 0 0 a 4 0 0 a 3 0 0 a 2 0 0 a i b = 1 0 0 a 50 40 30 20 10 23456 0.1 200 100 0 0.2 0.5 1 2 5 10 20 50 100 v c e = 3 v v c e = 5 v 14 0.5 12 10 8 6 4 2 1 2 5 10 20 50 v c e = 1 v f = 2 g h z v c e = 3 v v c e = 5 v remark t he g raphs indicate nominal characteris tics . ne68539 /
data sheet pu10520ej01v0ds 4 2SC4957 collector current i c (ma) insertion power gain vs. collector current insertion power gain |s 21e | 2 (db) collector current i c (ma) noise figure vs. collector current noise figure nf (db) 1 12 v c e = 1 v 10 8 6 4 2 5 10 20 50 f = 2 g h z v c e = 3 v v c e = 5 v 4 0.5 3 2 1 0 1 2 5 10 20 50 f = 2 g h z v ce = 3 v remark the graphs indicate nominal charac terist ic s. s-parameters s-parameters/noise parameters are provided on the nec compound semiconductor devices web site in a form (s2p) that enables direct import to a microwave circuit simulator without keyboard input. click here to download s-parameters. [rf and microwave] [device parameters] url http://www.ncsd.necel.com/ ne68539 /
data sheet pu10520ej01v0ds 5 2SC4957 package di mensi ons 4-pi n mi ni mold package (uni t: mm) 1. collector 2. emitter 3. base 4. emitter pin connections t83 2.90.2 (1.8) (1.9) 0.95 2 1 3 4 0.85 0.6 +0.1 ?0.06 0.4 +0.1 ?0.05 0.4 +0.1 ?0.05 0.4 +0.1 ?0.05 2.8 +0.2 ?0.3 1.5 +0.2 ?0.1 5? 5? 0.8 0.16 +0.1 ?0.06 0 to 0.1 1.1 +0.2 ?0.1 5? 5? ne68539 /
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